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Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210
Figure 1: Energy offsets with SiO2- and Si3N4-embedding for one Si10-NC (0.8 nm size) embedded in SiO2 and th...
Figure 2: Evolution of energy offsets for SiO2- and Si3N4-embedded Si10-NCs (0.8 nm size) as a function of em...
Figure 3: Structures of samples investigated by synchrotron UPS: (a) Si-reference, (b) 1.7 nm Si-NWell in Si3N...
Figure 4: Cross-section HR-TEM images of samples QW-17-N (a), QW-17-O (b) and QW-26-N (c). Semi-transparent s...
Figure 5: Experimental evidence of HOMO ΔE by synchrotron UPS: (a) scans of NWell samples and a hydrogen-term...
Figure 6: Electronic properties obtained by h-DFT for Si233(NH2)87(OH)81 NWire of 1.4 nm diameter and 5.2 nm ...
Figure 7: Concept of an undoped FET consisting of a Si-NWire with drain/gate (channel)/source regions covered...
Figure 8: NEGF simulation results of undoped Si-NWire-FET illustrated in Figure 7: (a) gate-wrap-around Si-NWire FET ...
Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141
Figure 1: P- and B-concentrations as measured by MCs+-SIMS as function of PH3 to SiH4 gas flow ratio, or resp...
Figure 2: (a) Atom probe tomography reconstruction of P-doped Si nanocrystals (red iso-surfaces with ≥70 atom...
Figure 3: (a) Room temperature photoluminescence spectra of P-incorporating Si NCs in SRON (0–0.48 atom %) an...
Figure 4: Low-temperature PL data of samples with 5 nm SRO and 0.59 atom % P (SRO:P), 0.47 atom % B (SRO:B) a...
Figure 5: Transient transmission (TT) dynamics from pump-probe measurements at room temperature of ≈4.5 nm Si...
Figure 6: J–E data of injection-blocking MOS-capacitors with P- or B-incorporating Si NCs in SRO and SRON and...
Figure 7: (a) J–t transients of the same MOS-capacitors as in the previous figure measured at E = 0.2 MV/cm. ...